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PMBT3906
PNP switching transistor
Rev. 05 -- 4 October 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
PNP switching transistor
FEATURES * Collector current capability IC = -200 mA * Collector-emitter voltage VCEO = -40 V. APPLICATIONS * General amplification and switching. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT3904. MARKING TYPE NUMBER PMBT3906 Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China.
Top view
PMBT3906
QUICK REFERENCE DATA SYMBOL VCEO IC PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) MAX. -40 -200 UNIT V mA
MARKING CODE(1) 2A
handbook, halfpage
3 3 1 2 1 2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION TYPE NUMBER PMBT3906 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23
Rev. 05 - 4 October 2007
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NXP Semiconductors
Product specification
PNP switching transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN.
PMBT3906
MAX. -40 -40 -6 -200 -200 -100 250 +150 150 +150 V V V
UNIT
mA mA mA mW C C C
UNIT K/W
Rev. 05 - 4 October 2007
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NXP Semiconductors
Product specification
PNP switching transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = -30 V IC = 0; VEB = -6 V VCE = -1 V; see Fig.2 IC = -0.1 mA IC = -1 mA IC = -10 mA IC = -50 mA IC = -100 mA VCEsat VBEsat Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IC = -10 mA; IB = -1 mA IC = -50 mA; IB = -5 mA IE = ie = 0; VCB = -5 V; f = 1 MHz IC = ic = 0; VEB = -500 mV; f = 1 MHz IC = -10 mA; VCE = -20 V; f = 100 MHz IC = -100 A; VCE = -5 V; RS = 1 k; f = 10 Hz to 15.7 kHz ICon = -10 mA; IBon = -1 mA; IBoff = 1 mA 60 80 100 60 30 - - - - - - 250 - - - - - MIN.
PMBT3906
MAX. -50 -50
UNIT nA nA
300 - - -250 -400 -850 -950 4.5 10 - 4 mV mV mV mV pF pF MHz dB
Switching times (between 10% and 90% levels); see Fig.7 td tr ts tf delay time rise time storage time fall time - - - - 35 35 225 75 ns ns ns ns
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NXP Semiconductors
Product specification
PNP switching transistor
PMBT3906
handbook, halfpage
600
MHC459
handbook, halfpage
(3) (2) (1)
hFE
(1)
-250 IC (mA) -200
MHC460
(4)
400 -150
(5) (6) (7)
(2)
-100
(8)
200
(3) (9)
-50
(10)
0 -10-1
-1
-10
-102 -103 IC (mA) (1) (2) (3) (4)
0
0
-2
-4
-6
-8
-10 VCE (V)
Tamb = 25 C. VCE = -1 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IB = -1.5 mA. IB = -1.35 mA. IB = -1.2 mA. IB = -1.05 mA. (5) (6) (7) (8) IB = -0.9 mA. IB = -0.75 mA. IB = -0.6 mA. IB = -0.45 mA. (9) IB = -0.3 mA. (10) IB = -0.15 mA.
Fig.3 Fig.2 DC current gain; typical values.
Collector current as a function of collector-emitter voltage.
handbook, halfpage
-1200 VBE (mV) -1000
MHC461
handbook, halfpage
-1200 VBEsat (mV) -1000
MHC462
(1) (1)
-800
(2)
-800
(2)
-600
(3)
-600
(3)
-400
-400
-200 -10-1
-1
-10
-102
-103 IC (mA)
-200 -10-1
-1
-10
-102
-103 IC (mA)
VCE = -1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.4
Base-emitter voltage as a function of collector current.
Fig.5
Base-emitter saturation voltage as a function of collector current.
Rev. 05 - 4 October 2007
5 of 9
NXP Semiconductors
Product specification
PNP switching transistor
PMBT3906
-103 handbook, halfpage VCEsat (mV)
MHC463
(1)
-102
(2) (3)
-10 -10-1
-1
-10
-102
IC (mA)
-103
IC/IB = 10. (1) Tamb = 25 C. (2) Tamb = 150 C. (3) Tamb = -55 C.
Fig.6
Collector-emitter saturation voltage as a function of collector current.
handbook, full pagewidth
VBB
VCC
RB (probe) oscilloscope 450 Vi R1 R2
RC Vo (probe) 450 DUT oscilloscope
MGD624
Vi = 5 V; T = 500 s; tp = 10 s; tr = tf 3 ns. R1 = 56 ; R2 = 2.5 k; RB = 3.9 k; RC = 270 . VBB = 1.9 V; VCC = -3 V. Oscilloscope: input impedance Zi = 50 .
Fig.7 Test circuit for switching times.
Rev. 05 - 4 October 2007
6 of 9
NXP Semiconductors
Product specification
PNP switching transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
PMBT3906
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC TO-236AB EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
Rev. 05 - 4 October 2007
7 of 9
NXP Semiconductors
PMBT3906
PNP switching transistor
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 05 - 4 October 2007
8 of 9
NXP Semiconductors
PMBT3906
PNP switching transistor
Revision history
Table 1. Revision history Release date 20071004 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes PMBT3906_4 PMBT3906_3 PMBT3906_2 Document ID PMBT3906_N_5 Modifications: PMBT3906_4 (9397 750 12535) PMBT3906_3 (9397 750 05816) PMBT3906_CNV_2 (9397 750 02091)
*
Marking code corrected (page 2)
20040121 19990427 19970505
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 October 2007 Document identifier: PMBT3906_N_5

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